PART |
Description |
Maker |
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX25U6473F |
1.8V 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO
|
Macronix International
|
MX25L6408EMI12G MX25L6408EZNI12G MX25L6408EM2I12G |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory 64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory Surface Mount Schottky Power Rectifier Plastic SOD?123 Package 18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited ONSEMI TI
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位(8Mx8 / 4Mx16)的CMOS掩膜ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|